STD4NK60Z-1 - MOSFET N-CH 600V 4A IPAK

Fabrikatzailea Taldea zenbakia

STD4NK60Z-1

Barne Taldea zenbakia

ABC-STD4NK60Z-1

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 600V 4A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

963928 Pieces

Erreferentzia Prezioa

~~USD 0.33957~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STD4NK60Z-1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STD4NK60Z-1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STD4NK60Z-1

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 600V 4A IPAK

Series : SuperMESH™

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 50µA

Ateko karga (Qg) (Max) @ Vgs : 26nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 510pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 70W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I-PAK

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STD , STD4N

Dokumentuak STD4NK60Z-1

Fitxak : STD4NK60Z-1.pdf

produktu erlazionatutako STD4NK60Z-1 STMicroelectronics

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