STB80NF55L-08-1 - MOSFET N-CH 55V 80A I2PAK

Fabrikatzailea Taldea zenbakia

STB80NF55L-08-1

Barne Taldea zenbakia

ABC-STB80NF55L-08-1

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 55V 80A I2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

220040 Pieces

Erreferentzia Prezioa

~~USD 1.7~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STB80NF55L-08-1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STB80NF55L-08-1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STB80NF55L-08-1

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 55V 80A I2PAK

Series : STripFET™ II

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 55V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 80A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 100nC @ 4.5V

Vgs (Max) : ±16V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4350pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 300W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I2PAK

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STB80 , STB80NF

Dokumentuak STB80NF55L-08-1

Fitxak : STB80NF55L-08-1.pdf

produktu erlazionatutako STB80NF55L-08-1 STMicroelectronics

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