FQB4N80TM - MOSFET N-CH 800V 3.9A D2PAK

Fabrikatzailea Taldea zenbakia

FQB4N80TM

Barne Taldea zenbakia

ABC-FQB4N80TM

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 800V 3.9A D2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

720629 Pieces

Erreferentzia Prezioa

~~USD 0.45422~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQB4N80TM stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQB4N80TM

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQB4N80TM

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 800V 3.9A D2PAK

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3.9A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.6 Ohm @ 1.95A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 880pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.13W (Ta), 130W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D²PAK (TO-263AB)

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQB , FQB4

Dokumentuak FQB4N80TM

Fitxak : FQB4N80TM.pdf

produktu erlazionatutako FQB4N80TM ON Semiconductor

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