JANTXV1N5615US - DIODE GEN PURP 200V 1A D-5A

Fabrikatzailea Taldea zenbakia

JANTXV1N5615US

Barne Taldea zenbakia

ABC-JANTXV1N5615US

fabrikatzailea

Microsemi Corporation

Azalpen laburra

DIODE GEN PURP 200V 1A D-5A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

63657 Pieces

Erreferentzia Prezioa

~~USD 6.61046~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute JANTXV1N5615US stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak JANTXV1N5615US

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : JANTXV1N5615US

fabrikatzailea : Microsemi Corporation

deskribapena : DIODE GEN PURP 200V 1A D-5A

Series : Military, MIL-PRF-19500/429

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 200V

Oraingoa - Batez besteko laukizatua (Io) : 1A

Tentsioa - Aurrera (Vf) (Max) @ If : 1.6V @ 3A

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 150ns

Oraingoa - alderantzizko ihesa @ Vr : 500nA @ 600V

Edukiera @ Vr, F : 45pF @ 12V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SQ-MELF, A

Hornitzaileentzako gailu paketea : D-5A

Eragiketa tenperatura - Junction : -65°C ~ 175°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : JANT , JANTXV1

Dokumentuak JANTXV1N5615US

Fitxak : JANTXV1N5615US.pdf

produktu erlazionatutako JANTXV1N5615US Microsemi Corporation

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