IRFH7004TR2PBF - MOSFET N CH 40V 100A PQFN5X6

Fabrikatzailea Taldea zenbakia

IRFH7004TR2PBF

Barne Taldea zenbakia

ABC-IRFH7004TR2PBF

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N CH 40V 100A PQFN5X6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

63680 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRFH7004TR2PBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRFH7004TR2PBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRFH7004TR2PBF

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N CH 40V 100A PQFN5X6

Series : HEXFET®, StrongIRFET™

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 150µA

Ateko karga (Qg) (Max) @ Vgs : 194nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6419pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 156W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-PQFN (5x6)

Paketea / Kaxa : 8-VQFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRFH , IRFH700

Dokumentuak IRFH7004TR2PBF

Fitxak : IRFH7004TR2PBF.pdf

produktu erlazionatutako IRFH7004TR2PBF Infineon Technologies

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