BSZ15DC02KDHXTMA1 - MOSFET N/P-CH 20V 8TDSON

Fabrikatzailea Taldea zenbakia

BSZ15DC02KDHXTMA1

Barne Taldea zenbakia

ABC-BSZ15DC02KDHXTMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N/P-CH 20V 8TDSON

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1491560 Pieces

Erreferentzia Prezioa

~~USD 0.21945~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSZ15DC02KDHXTMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSZ15DC02KDHXTMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSZ15DC02KDHXTMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N/P-CH 20V 8TDSON

Series : Automotive, AEC-Q101, HEXFET®

Taldearen egoera : Active

FET Mota : N and P-Channel Complementary

FET Ezaugarria : Logic Level Gate, 2.5V Drive

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 5.1A, 3.2A

Rds On (Max) @ Id, Vgs : 55 mOhm @ 5.1A, 4.5V

Vgs (th) (Max) @ Id : 1.4V @ 110µA

Ateko karga (Qg) (Max) @ Vgs : 2.8nC @ 4.5V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 419pF @ 10V

Potentzia - Max : 2.5W

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-PowerTDFN

Hornitzaileentzako gailu paketea : PG-TSDSON-8-FL

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSZ15 , BSZ15DC0

Dokumentuak BSZ15DC02KDHXTMA1

Fitxak : BSZ15DC02KDHXTMA1.pdf

produktu erlazionatutako BSZ15DC02KDHXTMA1 Infineon Technologies

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