STH185N10F3-6 - MOSFET N-CH 100V 180A H2PAK-6

Fabrikatzailea Taldea zenbakia

STH185N10F3-6

Barne Taldea zenbakia

ABC-STH185N10F3-6

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 100V 180A H2PAK-6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

211512 Pieces

Erreferentzia Prezioa

~~USD 1.547485~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STH185N10F3-6 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STH185N10F3-6

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STH185N10F3-6

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 100V 180A H2PAK-6

Series : Automotive, AEC-Q101, STripFET™ F3

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 180A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 114.6nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6665pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 315W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : H2PAK-6

Paketea / Kaxa : TO-263-7, D²Pak (6 Leads + Tab)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STH1 , STH185

Dokumentuak STH185N10F3-6

Fitxak : STH185N10F3-6.pdf

produktu erlazionatutako STH185N10F3-6 STMicroelectronics

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