IRFH7110TR2PBF - MOSFET N CH 100V 11A PQFN5X6

Fabrikatzailea Taldea zenbakia

IRFH7110TR2PBF

Barne Taldea zenbakia

ABC-IRFH7110TR2PBF

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N CH 100V 11A PQFN5X6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

63648 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRFH7110TR2PBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRFH7110TR2PBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRFH7110TR2PBF

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N CH 100V 11A PQFN5X6

Series : HEXFET®

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 11A (Ta), 58A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Ateko karga (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3240pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.6W (Ta), 104W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-PQFN (5x6)

Paketea / Kaxa : 8-TQFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRFH , IRFH711

Dokumentuak IRFH7110TR2PBF

Fitxak : IRFH7110TR2PBF.pdf

produktu erlazionatutako IRFH7110TR2PBF Infineon Technologies

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