PSMN4R3-100ES,127 - MOSFET N-CH 100V 120A I2PAK

Fabrikatzailea Taldea zenbakia

PSMN4R3-100ES,127

Barne Taldea zenbakia

ABC-PSMN4R3-100ES,127

fabrikatzailea

Nexperia USA Inc.

Azalpen laburra

MOSFET N-CH 100V 120A I2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

213144 Pieces

Erreferentzia Prezioa

~~USD 1.755~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute PSMN4R3-100ES,127 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak PSMN4R3-100ES,127

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : PSMN4R3-100ES,127

fabrikatzailea : Nexperia USA Inc.

deskribapena : MOSFET N-CH 100V 120A I2PAK

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 120A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 170nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 9900pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 338W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I2PAK

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : PSMN4 , PSMN4R3-

Dokumentuak PSMN4R3-100ES,127

Fitxak : PSMN4R3-100ES,127.pdf

produktu erlazionatutako PSMN4R3-100ES,127 Nexperia USA Inc.

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