TK6A80E,S4X - MOSFET N-CH 800V TO220SIS

Fabrikatzailea Taldea zenbakia

TK6A80E,S4X

Barne Taldea zenbakia

ABC-TK6A80E,S4X

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 800V TO220SIS

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

346367 Pieces

Erreferentzia Prezioa

~~USD 0.945~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK6A80E,S4X stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK6A80E,S4X

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK6A80E,S4X

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 800V TO220SIS

Series : π-MOSVIII

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.7 Ohm @ 3A, 10V

Vgs (th) (Max) @ Id : 4V @ 600µA

Ateko karga (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1350pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 45W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220SIS

Paketea / Kaxa : TO-220-3 Full Pack

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK6 , TK6A8

Dokumentuak TK6A80E,S4X

Fitxak : TK6A80E,S4X.pdf

produktu erlazionatutako TK6A80E,S4X Toshiba Semiconductor and Storage

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