SI1317DL-T1-GE3 - MOSFET P-CH 20V 1.4A SC70

Fabrikatzailea Taldea zenbakia

SI1317DL-T1-GE3

Barne Taldea zenbakia

ABC-SI1317DL-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET P-CH 20V 1.4A SC70

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4557882 Pieces

Erreferentzia Prezioa

~~USD 0.071815~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SI1317DL-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SI1317DL-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SI1317DL-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET P-CH 20V 1.4A SC70

Series : TrenchFET®

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 150 mOhm @ 1.4A, 4.5V

Vgs (th) (Max) @ Id : 800mV @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 6.5nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 272pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 400mW (Ta), 500mW (Tc)

Eragiketa tenperatura : -50°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-323

Paketea / Kaxa : SC-70, SOT-323

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SI131 , SI1317D

Dokumentuak SI1317DL-T1-GE3

Fitxak : SI1317DL-T1-GE3.pdf

produktu erlazionatutako SI1317DL-T1-GE3 Vishay Siliconix

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