TK4P55DA(T6RSS-Q) - MOSFET N-CH 550V 3.5A DPAK-3

Fabrikatzailea Taldea zenbakia

TK4P55DA(T6RSS-Q)

Barne Taldea zenbakia

ABC-TK4P55DA(T6RSS-Q)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 550V 3.5A DPAK-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

78111 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK4P55DA(T6RSS-Q) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK4P55DA(T6RSS-Q)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK4P55DA(T6RSS-Q)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 550V 3.5A DPAK-3

Series : π-MOSVII

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 550V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3.5A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.45 Ohm @ 1.8A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 9nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 380pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 80W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D-Pak

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK4P5 , TK4P55DA

Dokumentuak TK4P55DA(T6RSS-Q)

Fitxak : TK4P55DA(T6RSS-Q).pdf

produktu erlazionatutako TK4P55DA(T6RSS-Q) Toshiba Semiconductor and Storage

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