SI1305DL-T1-GE3 - MOSFET P-CH 8V 0.86A SC-70-3

Fabrikatzailea Taldea zenbakia

SI1305DL-T1-GE3

Barne Taldea zenbakia

ABC-SI1305DL-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET P-CH 8V 0.86A SC-70-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

42368 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SI1305DL-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SI1305DL-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SI1305DL-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET P-CH 8V 0.86A SC-70-3

Series : TrenchFET®

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 8V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 860mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 280 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)

Ateko karga (Qg) (Max) @ Vgs : 4nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : -

FET Ezaugarria : -

Potentzia xahutzea (Max) : 290mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SC-70-3

Paketea / Kaxa : SC-70, SOT-323

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SI130 , SI1305D

Dokumentuak SI1305DL-T1-GE3

Fitxak : SI1305DL-T1-GE3.pdf

produktu erlazionatutako SI1305DL-T1-GE3 Vishay Siliconix

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