FDB3632-F085 - MOSFET N-CH 100V 12A D2PAK

Fabrikatzailea Taldea zenbakia

FDB3632-F085

Barne Taldea zenbakia

ABC-FDB3632-F085

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 100V 12A D2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

282968 Pieces

Erreferentzia Prezioa

~~USD 1.15673~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDB3632-F085 stock saltzen da.

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zehaztapenak FDB3632-F085

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDB3632-F085

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 100V 12A D2PAK

Series : Automotive, AEC-Q101, PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 9 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6000pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 310W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-263AB

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDB3 , FDB363

Dokumentuak FDB3632-F085

Fitxak : FDB3632-F085.pdf

produktu erlazionatutako FDB3632-F085 ON Semiconductor

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