TSM089N08LCR RLG - MOSFET N-CH 80V 67A 8PDFN

Fabrikatzailea Taldea zenbakia

TSM089N08LCR RLG

Barne Taldea zenbakia

ABC-TSM089N08LCR RLG

fabrikatzailea

Taiwan Semiconductor Corporation

Azalpen laburra

MOSFET N-CH 80V 67A 8PDFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1169595 Pieces

Erreferentzia Prezioa

~~USD 0.27986~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TSM089N08LCR RLG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TSM089N08LCR RLG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TSM089N08LCR RLG

fabrikatzailea : Taiwan Semiconductor Corporation

deskribapena : MOSFET N-CH 80V 67A 8PDFN

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 67A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6119pF @ 40V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 83W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-PDFN (5x6)

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TSM08 , TSM089N0

Dokumentuak TSM089N08LCR RLG

Fitxak : TSM089N08LCR RLG.pdf

produktu erlazionatutako TSM089N08LCR RLG Taiwan Semiconductor Corporation

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