BAS1603WE6327HTSA1 - DIODE GEN PURP 80V 250MA SOD323

Fabrikatzailea Taldea zenbakia

BAS1603WE6327HTSA1

Barne Taldea zenbakia

ABC-BAS1603WE6327HTSA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

DIODE GEN PURP 80V 250MA SOD323

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

17410904 Pieces

Erreferentzia Prezioa

~~USD 0.0188~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BAS1603WE6327HTSA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BAS1603WE6327HTSA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BAS1603WE6327HTSA1

fabrikatzailea : Infineon Technologies

deskribapena : DIODE GEN PURP 80V 250MA SOD323

Series : -

Taldearen egoera : Last Time Buy

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 80V

Oraingoa - Batez besteko laukizatua (Io) : 250mA (DC)

Tentsioa - Aurrera (Vf) (Max) @ If : 1.25V @ 150mA

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 4ns

Oraingoa - alderantzizko ihesa @ Vr : 1µA @ 75V

Edukiera @ Vr, F : 2pF @ 0V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SC-76, SOD-323

Hornitzaileentzako gailu paketea : PG-SOD323-2

Eragiketa tenperatura - Junction : 150°C (Max)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BAS160 , BAS1603WE

Dokumentuak BAS1603WE6327HTSA1

Fitxak : BAS1603WE6327HTSA1.pdf

produktu erlazionatutako BAS1603WE6327HTSA1 Infineon Technologies

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