1N4150W-HE3-08 - DIODE GEN PURP 50V 200MA SOD123

Fabrikatzailea Taldea zenbakia

1N4150W-HE3-08

Barne Taldea zenbakia

ABC-1N4150W-HE3-08

fabrikatzailea

Vishay Semiconductor Diodes Division

Azalpen laburra

DIODE GEN PURP 50V 200MA SOD123

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

14231511 Pieces

Erreferentzia Prezioa

~~USD 0.023~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute 1N4150W-HE3-08 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak 1N4150W-HE3-08

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : 1N4150W-HE3-08

fabrikatzailea : Vishay Semiconductor Diodes Division

deskribapena : DIODE GEN PURP 50V 200MA SOD123

Series : -

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 50V

Oraingoa - Batez besteko laukizatua (Io) : 200mA

Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 200mA

Abiadura : Small Signal =< 200mA (Io), Any Speed

Alderantzizko berreskurapen denbora (trr) : 4ns

Oraingoa - alderantzizko ihesa @ Vr : 100nA @ 50V

Edukiera @ Vr, F : 2.5pF @ 0V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SOD-123

Hornitzaileentzako gailu paketea : SOD-123

Eragiketa tenperatura - Junction : -55°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : 1N41 , 1N4150W

Dokumentuak 1N4150W-HE3-08

Fitxak : 1N4150W-HE3-08.pdf

produktu erlazionatutako 1N4150W-HE3-08 Vishay Semiconductor Diodes Division

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