FQU1N80TU - MOSFET N-CH 800V 1A IPAK

Fabrikatzailea Taldea zenbakia

FQU1N80TU

Barne Taldea zenbakia

ABC-FQU1N80TU

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 800V 1A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1537704 Pieces

Erreferentzia Prezioa

~~USD 0.212865~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQU1N80TU stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQU1N80TU

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQU1N80TU

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 800V 1A IPAK

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 20 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 195pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 45W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I-PAK

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQU , FQU1

Dokumentuak FQU1N80TU

Fitxak : FQU1N80TU.pdf

produktu erlazionatutako FQU1N80TU ON Semiconductor

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