IRL640STRRPBF - MOSFET N-CH 200V 17A D2PAK

Fabrikatzailea Taldea zenbakia

IRL640STRRPBF

Barne Taldea zenbakia

ABC-IRL640STRRPBF

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CH 200V 17A D2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

353234 Pieces

Erreferentzia Prezioa

~~USD 0.926625~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRL640STRRPBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRL640STRRPBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRL640STRRPBF

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CH 200V 17A D2PAK

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 17A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4V, 5V

Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 66nC @ 5V

Vgs (Max) : ±10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1800pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.1W (Ta), 125W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D2PAK

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRL6 , IRL640

Dokumentuak IRL640STRRPBF

Fitxak : IRL640STRRPBF.pdf

produktu erlazionatutako IRL640STRRPBF Vishay Siliconix

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