STH275N8F7-6AG - MOSFET N-CH 80V 180A H2PAK-6

Fabrikatzailea Taldea zenbakia

STH275N8F7-6AG

Barne Taldea zenbakia

ABC-STH275N8F7-6AG

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 80V 180A H2PAK-6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

222586 Pieces

Erreferentzia Prezioa

~~USD 1.4705~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STH275N8F7-6AG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STH275N8F7-6AG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STH275N8F7-6AG

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 80V 180A H2PAK-6

Series : Automotive, AEC-Q101, STripFET™ F7

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 180A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 90A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 193nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 13600pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 315W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : H2PAK-6

Paketea / Kaxa : TO-263-7, D²Pak (6 Leads + Tab)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STH2 , STH275N

Dokumentuak STH275N8F7-6AG

Fitxak : STH275N8F7-6AG.pdf

produktu erlazionatutako STH275N8F7-6AG STMicroelectronics

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