SQJ560EP-T1_GE3 - MOSFET DUAL N P CH 60V PPAK SO-8

Fabrikatzailea Taldea zenbakia

SQJ560EP-T1_GE3

Barne Taldea zenbakia

ABC-SQJ560EP-T1_GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET DUAL N P CH 60V PPAK SO-8

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1014937 Pieces

Erreferentzia Prezioa

~~USD 0.322505~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SQJ560EP-T1_GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SQJ560EP-T1_GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SQJ560EP-T1_GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET DUAL N P CH 60V PPAK SO-8

Series : Automotive, AEC-Q101, TrenchFET®

Taldearen egoera : Active

FET Mota : N and P-Channel

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30A (Tc), 18A (Tc)

Rds On (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 30nC @ 10V, 45nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1650pF @ 25V

Potentzia - Max : 34W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : PowerPAK® SO-8 Dual

Hornitzaileentzako gailu paketea : PowerPAK® SO-8 Dual

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SQJ56 , SQJ560E

Dokumentuak SQJ560EP-T1_GE3

Fitxak : SQJ560EP-T1_GE3.pdf

produktu erlazionatutako SQJ560EP-T1_GE3 Vishay Siliconix

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