TK8R2A06PL,S4X - X35 PB-F POWER MOSFET TRANSISTOR

Fabrikatzailea Taldea zenbakia

TK8R2A06PL,S4X

Barne Taldea zenbakia

ABC-TK8R2A06PL,S4X

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

411719 Pieces

Erreferentzia Prezioa

~~USD 0.795~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK8R2A06PL,S4X stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK8R2A06PL,S4X

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK8R2A06PL,S4X

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : X35 PB-F POWER MOSFET TRANSISTOR

Series : U-MOSIX-H

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 50A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 300µA

Ateko karga (Qg) (Max) @ Vgs : 28.4nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1990pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 36W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220SIS

Paketea / Kaxa : TO-220-3 Full Pack

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK8R , TK8R2A0

Dokumentuak TK8R2A06PL,S4X

Fitxak : TK8R2A06PL,S4X.pdf

produktu erlazionatutako TK8R2A06PL,S4X Toshiba Semiconductor and Storage

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