IXTT6N120 - MOSFET N-CH 1200V 6A TO-268

Fabrikatzailea Taldea zenbakia

IXTT6N120

Barne Taldea zenbakia

ABC-IXTT6N120

fabrikatzailea

IXYS

Azalpen laburra

MOSFET N-CH 1200V 6A TO-268

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

90544 Pieces

Erreferentzia Prezioa

~~USD 4.130835~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IXTT6N120 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IXTT6N120

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IXTT6N120

fabrikatzailea : IXYS

deskribapena : MOSFET N-CH 1200V 6A TO-268

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 1200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.6 Ohm @ 3A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 56nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1950pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 300W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-268

Paketea / Kaxa : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IXT , IXTT

Dokumentuak IXTT6N120

Fitxak : IXTT6N120.pdf

produktu erlazionatutako IXTT6N120 IXYS

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