NVMFS5H663NLT1G - T8 60V LOW COSS

Fabrikatzailea Taldea zenbakia

NVMFS5H663NLT1G

Barne Taldea zenbakia

ABC-NVMFS5H663NLT1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

T8 60V LOW COSS

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1255555 Pieces

Erreferentzia Prezioa

~~USD 0.2607~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NVMFS5H663NLT1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NVMFS5H663NLT1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NVMFS5H663NLT1G

fabrikatzailea : ON Semiconductor

deskribapena : T8 60V LOW COSS

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 16.2A (Ta), 67A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 56µA

Ateko karga (Qg) (Max) @ Vgs : 17nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1131pF @ 30V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.7W (Ta), 63W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 5-DFN (5x6) (8-SOFL)

Paketea / Kaxa : 8-PowerTDFN, 5 Leads

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NVMFS , NVMFS5H

Dokumentuak NVMFS5H663NLT1G

Fitxak : NVMFS5H663NLT1G.pdf

produktu erlazionatutako NVMFS5H663NLT1G ON Semiconductor

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