DGD2104AS8-13 - IC GATE DRVR HALF-BRIDGE 8SO

Fabrikatzailea Taldea zenbakia

DGD2104AS8-13

Barne Taldea zenbakia

ABC-DGD2104AS8-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

IC GATE DRVR HALF-BRIDGE 8SO

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

34144 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DGD2104AS8-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DGD2104AS8-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DGD2104AS8-13

fabrikatzailea : Diodes Incorporated

deskribapena : IC GATE DRVR HALF-BRIDGE 8SO

Series : -

Taldearen egoera : Obsolete

Gidatutako Konfigurazioa : Half-Bridge

Kanal mota : Synchronous

Gidari kopurua : 2

Ate mota : IGBT, N-Channel MOSFET

Tentsioa - Hornidura : 10V ~ 20V

Logikako tentsioa - VIL, VIH : 0.8V, 2.5V

Uneko irteera maximoa (iturria, konketa) : 210mA, 360mA

Sarrera mota : Non-Inverting

Alboko tentsio altua - Max (Bootstrap) : 600V

Igoera / Eroriko Denbora (Normala) : 100ns, 50ns

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

Hornitzaileentzako gailu paketea : 8-SO

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DGD2 , DGD210

Dokumentuak DGD2104AS8-13

Fitxak : DGD2104AS8-13.pdf

produktu erlazionatutako DGD2104AS8-13 Diodes Incorporated

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