SIS903DN-T1-GE3 - MOSFET DUAL P-CHAN POWERPAK 1212

Fabrikatzailea Taldea zenbakia

SIS903DN-T1-GE3

Barne Taldea zenbakia

ABC-SIS903DN-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET DUAL P-CHAN POWERPAK 1212

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1408029 Pieces

Erreferentzia Prezioa

~~USD 0.23247~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SIS903DN-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SIS903DN-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SIS903DN-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET DUAL P-CHAN POWERPAK 1212

Series : TrenchFET® Gen III

Taldearen egoera : Active

FET Mota : 2 P-Channel (Dual)

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A (Tc)

Rds On (Max) @ Id, Vgs : 20.1 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 42nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2565pF @ 10V

Potentzia - Max : 2.6W (Ta), 23W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : PowerPAK® 1212-8 Dual

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8 Dual

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SIS90 , SIS903D

Dokumentuak SIS903DN-T1-GE3

Fitxak : SIS903DN-T1-GE3.pdf

produktu erlazionatutako SIS903DN-T1-GE3 Vishay Siliconix

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