ZDS020N60TB - MOSFET N-CH 600V 8SOIC

Fabrikatzailea Taldea zenbakia

ZDS020N60TB

Barne Taldea zenbakia

ABC-ZDS020N60TB

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

MOSFET N-CH 600V 8SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1461264 Pieces

Erreferentzia Prezioa

~~USD 0.224~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute ZDS020N60TB stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak ZDS020N60TB

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : ZDS020N60TB

fabrikatzailea : Rohm Semiconductor

deskribapena : MOSFET N-CH 600V 8SOIC

Series : -

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 630mA (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 310pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SOP

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : ZDS , ZDS02

Dokumentuak ZDS020N60TB

Fitxak : ZDS020N60TB.pdf

produktu erlazionatutako ZDS020N60TB Rohm Semiconductor

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