DMG4N60SJ3 - MOSFET NCH 600V 3A TO251

Fabrikatzailea Taldea zenbakia

DMG4N60SJ3

Barne Taldea zenbakia

ABC-DMG4N60SJ3

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET NCH 600V 3A TO251

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

989485 Pieces

Erreferentzia Prezioa

~~USD 0.3308~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMG4N60SJ3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMG4N60SJ3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMG4N60SJ3

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET NCH 600V 3A TO251

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 14.3nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 532pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 41W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-251

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMG , DMG4N

Dokumentuak DMG4N60SJ3

Fitxak : DMG4N60SJ3.pdf

produktu erlazionatutako DMG4N60SJ3 Diodes Incorporated

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