FQT7N10LTF - MOSFET N-CH 100V 1.7A SOT-223

Fabrikatzailea Taldea zenbakia

FQT7N10LTF

Barne Taldea zenbakia

ABC-FQT7N10LTF

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 100V 1.7A SOT-223

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

3210319 Pieces

Erreferentzia Prezioa

~~USD 0.10196~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQT7N10LTF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQT7N10LTF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQT7N10LTF

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 100V 1.7A SOT-223

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.7A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 350 mOhm @ 850mA, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 6nC @ 5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 290pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-223-4

Paketea / Kaxa : TO-261-4, TO-261AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQT , FQT7N

Dokumentuak FQT7N10LTF

Fitxak : FQT7N10LTF.pdf

produktu erlazionatutako FQT7N10LTF ON Semiconductor

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