NVMFD5C650NLWFT1G - MOSFET 2N-CH 60V 111A S08FL

Fabrikatzailea Taldea zenbakia

NVMFD5C650NLWFT1G

Barne Taldea zenbakia

ABC-NVMFD5C650NLWFT1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET 2N-CH 60V 111A S08FL

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

544915 Pieces

Erreferentzia Prezioa

~~USD 0.600675~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NVMFD5C650NLWFT1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NVMFD5C650NLWFT1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NVMFD5C650NLWFT1G

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET 2N-CH 60V 111A S08FL

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 21A (Ta), 111A (Tc)

Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 98µA

Ateko karga (Qg) (Max) @ Vgs : 16nC @ 4.5V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2546pF @ 25V

Potentzia - Max : 3.5W (Ta), 125W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-PowerTDFN

Hornitzaileentzako gailu paketea : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NVMFD , NVMFD5C6

Dokumentuak NVMFD5C650NLWFT1G

Fitxak : NVMFD5C650NLWFT1G.pdf

produktu erlazionatutako NVMFD5C650NLWFT1G ON Semiconductor

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