SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Fabrikatzailea Taldea zenbakia

SCTW90N65G2V

Barne Taldea zenbakia

ABC-SCTW90N65G2V

fabrikatzailea

STMicroelectronics

Azalpen laburra

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

49696 Pieces

Erreferentzia Prezioa

~~USD 30.075~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SCTW90N65G2V stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SCTW90N65G2V

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SCTW90N65G2V

fabrikatzailea : STMicroelectronics

deskribapena : SILICON CARBIDE POWER MOSFET 650

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : SiCFET (Silicon Carbide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 90A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3300pF @ 400V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 390W (Tc)

Eragiketa tenperatura : -55°C ~ 200°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : HiP247™

Paketea / Kaxa : TO-247-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SCTW , SCTW90

Dokumentuak SCTW90N65G2V

Fitxak : SCTW90N65G2V.pdf

produktu erlazionatutako SCTW90N65G2V STMicroelectronics

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