IPP80R1K4P7XKSA1 - MOSFET N-CH 800V 4A TO220

Fabrikatzailea Taldea zenbakia

IPP80R1K4P7XKSA1

Barne Taldea zenbakia

ABC-IPP80R1K4P7XKSA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 800V 4A TO220

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

451472 Pieces

Erreferentzia Prezioa

~~USD 0.725~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPP80R1K4P7XKSA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPP80R1K4P7XKSA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPP80R1K4P7XKSA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 800V 4A TO220

Series : CoolMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 70µA

Ateko karga (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 250pF @ 500V

FET Ezaugarria : Super Junction

Potentzia xahutzea (Max) : 32W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : PG-TO220-3

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPP80 , IPP80R1K

Dokumentuak IPP80R1K4P7XKSA1

Fitxak : IPP80R1K4P7XKSA1.pdf

produktu erlazionatutako IPP80R1K4P7XKSA1 Infineon Technologies

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