IXFN80N60P3 - MOSFET N-CH 600V 66A SOT-227B

Fabrikatzailea Taldea zenbakia

IXFN80N60P3

Barne Taldea zenbakia

ABC-IXFN80N60P3

fabrikatzailea

IXYS

Azalpen laburra

MOSFET N-CH 600V 66A SOT-227B

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

57330 Pieces

Erreferentzia Prezioa

~~USD 10.6~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IXFN80N60P3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IXFN80N60P3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IXFN80N60P3

fabrikatzailea : IXYS

deskribapena : MOSFET N-CH 600V 66A SOT-227B

Series : HiPerFET™, Polar3™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 66A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 70 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 5V @ 8mA

Ateko karga (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 13100pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 960W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Chassis Mount

Hornitzaileentzako gailu paketea : SOT-227B

Paketea / Kaxa : SOT-227-4, miniBLOC

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IXF , IXFN8

Dokumentuak IXFN80N60P3

Fitxak : IXFN80N60P3.pdf

produktu erlazionatutako IXFN80N60P3 IXYS

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