BSZ088N03MSGATMA1 - MOSFET N-CH 30V 40A TSDSON-8

Fabrikatzailea Taldea zenbakia

BSZ088N03MSGATMA1

Barne Taldea zenbakia

ABC-BSZ088N03MSGATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 30V 40A TSDSON-8

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2008363 Pieces

Erreferentzia Prezioa

~~USD 0.16298~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSZ088N03MSGATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSZ088N03MSGATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSZ088N03MSGATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 30V 40A TSDSON-8

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 11A (Ta), 40A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 27nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2100pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.1W (Ta), 35W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TSDSON-8

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSZ08 , BSZ088N0

Dokumentuak BSZ088N03MSGATMA1

Fitxak : BSZ088N03MSGATMA1.pdf

produktu erlazionatutako BSZ088N03MSGATMA1 Infineon Technologies

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