FDB045AN08A0-F085 - MOSFET N-CH 75V 19A D2PAK

Fabrikatzailea Taldea zenbakia

FDB045AN08A0-F085

Barne Taldea zenbakia

ABC-FDB045AN08A0-F085

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 75V 19A D2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

218862 Pieces

Erreferentzia Prezioa

~~USD 1.495475~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDB045AN08A0-F085 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak FDB045AN08A0-F085

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDB045AN08A0-F085

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 75V 19A D2PAK

Series : Automotive, AEC-Q101, PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 75V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 19A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 138nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6600pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 310W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-263AB

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDB04 , FDB045AN

Dokumentuak FDB045AN08A0-F085

Fitxak : FDB045AN08A0-F085.pdf

produktu erlazionatutako FDB045AN08A0-F085 ON Semiconductor

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