IRFHM4226TRPBF - MOSFET N CH 25V 28A PQFN

Fabrikatzailea Taldea zenbakia

IRFHM4226TRPBF

Barne Taldea zenbakia

ABC-IRFHM4226TRPBF

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N CH 25V 28A PQFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

70592 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRFHM4226TRPBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRFHM4226TRPBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRFHM4226TRPBF

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N CH 25V 28A PQFN

Series : HEXFET®

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 28A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 50µA

Ateko karga (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2000pF @ 13V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.7W (Ta), 39W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : -

Paketea / Kaxa : 8-TQFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRFH , IRFHM42

Dokumentuak IRFHM4226TRPBF

Fitxak : IRFHM4226TRPBF.pdf

produktu erlazionatutako IRFHM4226TRPBF Infineon Technologies

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