NTLJS4149PTAG - MOSFET P-CH 30V 2.7A 6-WDFN

Fabrikatzailea Taldea zenbakia

NTLJS4149PTAG

Barne Taldea zenbakia

ABC-NTLJS4149PTAG

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET P-CH 30V 2.7A 6-WDFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

105392 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NTLJS4149PTAG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NTLJS4149PTAG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NTLJS4149PTAG

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET P-CH 30V 2.7A 6-WDFN

Series : -

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 2.7A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 62 mOhm @ 2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 15nC @ 4.5V

Vgs (Max) : ±12V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 960pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 700mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 6-WDFN (2x2)

Paketea / Kaxa : 6-WDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NTLJ , NTLJS4

Dokumentuak NTLJS4149PTAG

Fitxak : NTLJS4149PTAG.pdf

produktu erlazionatutako NTLJS4149PTAG ON Semiconductor

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