LND150N3-G-P013 - MOSFET N-CH 500V 30MA TO92-3

Fabrikatzailea Taldea zenbakia

LND150N3-G-P013

Barne Taldea zenbakia

ABC-LND150N3-G-P013

fabrikatzailea

Microchip Technology

Azalpen laburra

MOSFET N-CH 500V 30MA TO92-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1672580 Pieces

Erreferentzia Prezioa

~~USD 0.1957~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute LND150N3-G-P013 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak LND150N3-G-P013

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : LND150N3-G-P013

fabrikatzailea : Microchip Technology

deskribapena : MOSFET N-CH 500V 30MA TO92-3

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 500V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30mA (Tj)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 0V

Rds On (Max) @ Id, Vgs : 1000 Ohm @ 500µA, 0V

Vgs (th) (Max) @ Id : -

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 10pF @ 25V

FET Ezaugarria : Depletion Mode

Potentzia xahutzea (Max) : 740mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-92-3

Paketea / Kaxa : TO-226-3, TO-92-3 (TO-226AA)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : LND15 , LND150N

Dokumentuak LND150N3-G-P013

Fitxak : LND150N3-G-P013.pdf

produktu erlazionatutako LND150N3-G-P013 Microchip Technology

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