DMJ70H1D0SV3 - MOSFET N-CHANNEL 700V 6A TO251

Fabrikatzailea Taldea zenbakia

DMJ70H1D0SV3

Barne Taldea zenbakia

ABC-DMJ70H1D0SV3

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CHANNEL 700V 6A TO251

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

518350 Pieces

Erreferentzia Prezioa

~~USD 0.631465~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMJ70H1D0SV3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMJ70H1D0SV3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMJ70H1D0SV3

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CHANNEL 700V 6A TO251

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 700V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 12.8nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 420pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 104W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-251

Paketea / Kaxa : TO-251-3 Stub Leads, IPak

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMJ7 , DMJ70H

Dokumentuak DMJ70H1D0SV3

Fitxak : DMJ70H1D0SV3.pdf

produktu erlazionatutako DMJ70H1D0SV3 Diodes Incorporated

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