IPD180N10N3GBTMA1 - MOSFET N-CH 100V 43A TO252-3

Fabrikatzailea Taldea zenbakia

IPD180N10N3GBTMA1

Barne Taldea zenbakia

ABC-IPD180N10N3GBTMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 100V 43A TO252-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1416982 Pieces

Erreferentzia Prezioa

~~USD 0.231~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPD180N10N3GBTMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPD180N10N3GBTMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPD180N10N3GBTMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 100V 43A TO252-3

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 43A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 33µA

Ateko karga (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1800pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 71W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TO252-3

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPD18 , IPD180N1

Dokumentuak IPD180N10N3GBTMA1

Fitxak : IPD180N10N3GBTMA1.pdf

produktu erlazionatutako IPD180N10N3GBTMA1 Infineon Technologies

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