FQD2N60CTM-WS - MOSFET N-CH 600V 1.9A

Fabrikatzailea Taldea zenbakia

FQD2N60CTM-WS

Barne Taldea zenbakia

ABC-FQD2N60CTM-WS

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 600V 1.9A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1520918 Pieces

Erreferentzia Prezioa

~~USD 0.215215~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQD2N60CTM-WS stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQD2N60CTM-WS

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQD2N60CTM-WS

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 600V 1.9A

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.9A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.7 Ohm @ 950mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 235pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 44W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D-Pak

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQD2 , FQD2N6

Dokumentuak FQD2N60CTM-WS

Fitxak : FQD2N60CTM-WS.pdf

produktu erlazionatutako FQD2N60CTM-WS ON Semiconductor

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