FDD4N60NZ - MOSFET N CH 600V 3.4A DPAK

Fabrikatzailea Taldea zenbakia

FDD4N60NZ

Barne Taldea zenbakia

ABC-FDD4N60NZ

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N CH 600V 3.4A DPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1623111 Pieces

Erreferentzia Prezioa

~~USD 0.201665~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDD4N60NZ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDD4N60NZ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDD4N60NZ

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N CH 600V 3.4A DPAK

Series : UniFET-II™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3.4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 1.7A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 10.8nC @ 10V

Vgs (Max) : ±25V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 510pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 114W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DPAK

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDD , FDD4

Dokumentuak FDD4N60NZ

Fitxak : FDD4N60NZ.pdf

produktu erlazionatutako FDD4N60NZ ON Semiconductor

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