CUHS20S40,H3F - SCHOTTKY BARRIER DIODE LOW VF

Fabrikatzailea Taldea zenbakia

CUHS20S40,H3F

Barne Taldea zenbakia

ABC-CUHS20S40,H3F

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

SCHOTTKY BARRIER DIODE LOW VF

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4667733 Pieces

Erreferentzia Prezioa

~~USD 0.070125~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute CUHS20S40,H3F stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak CUHS20S40,H3F

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : CUHS20S40,H3F

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : SCHOTTKY BARRIER DIODE LOW VF

Series : -

Taldearen egoera : Active

Diodo mota : Schottky

Tentsioa - DC alderantzikatua (Vr) (Max) : 40V

Oraingoa - Batez besteko laukizatua (Io) : 2A

Tentsioa - Aurrera (Vf) (Max) @ If : 470mV @ 2A

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : -

Oraingoa - alderantzizko ihesa @ Vr : 300µA @ 40V

Edukiera @ Vr, F : 290pF @ 0V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 2-SMD, Flat Lead

Hornitzaileentzako gailu paketea : US2H

Eragiketa tenperatura - Junction : 150°C (Max)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : CUHS , CUHS20

Dokumentuak CUHS20S40,H3F

Fitxak : CUHS20S40,H3F.pdf

produktu erlazionatutako CUHS20S40,H3F Toshiba Semiconductor and Storage

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