DMN6069SE-13 - MOSFETN-CH 60VSOT223

Fabrikatzailea Taldea zenbakia

DMN6069SE-13

Barne Taldea zenbakia

ABC-DMN6069SE-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFETN-CH 60VSOT223

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

3071019 Pieces

Erreferentzia Prezioa

~~USD 0.106585~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN6069SE-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN6069SE-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN6069SE-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFETN-CH 60VSOT223

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4.3A (Ta), 10A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 69 mOhm @ 3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 825pF @ 30V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.2W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-223

Paketea / Kaxa : TO-261-4, TO-261AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN6 , DMN606

Dokumentuak DMN6069SE-13

Fitxak : DMN6069SE-13.pdf

produktu erlazionatutako DMN6069SE-13 Diodes Incorporated

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