TSM052N06PQ56 RLG - MOSFET N-CH 60V 100A 8PDFN

Fabrikatzailea Taldea zenbakia

TSM052N06PQ56 RLG

Barne Taldea zenbakia

ABC-TSM052N06PQ56 RLG

fabrikatzailea

Taiwan Semiconductor Corporation

Azalpen laburra

MOSFET N-CH 60V 100A 8PDFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

40365 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TSM052N06PQ56 RLG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TSM052N06PQ56 RLG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TSM052N06PQ56 RLG

fabrikatzailea : Taiwan Semiconductor Corporation

deskribapena : MOSFET N-CH 60V 100A 8PDFN

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 5.2 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 50nC @ 10V

Vgs (Max) : ±25V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3686pF @ 30V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 83W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-PDFN (5x6)

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TSM05 , TSM052N0

Dokumentuak TSM052N06PQ56 RLG

Fitxak : TSM052N06PQ56 RLG.pdf

produktu erlazionatutako TSM052N06PQ56 RLG Taiwan Semiconductor Corporation

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