GP1M009A020HG - MOSFET N-CH 200V 9A TO220

Fabrikatzailea Taldea zenbakia

GP1M009A020HG

Barne Taldea zenbakia

ABC-GP1M009A020HG

fabrikatzailea

Global Power Technologies Group

Azalpen laburra

MOSFET N-CH 200V 9A TO220

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

70368 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute GP1M009A020HG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak GP1M009A020HG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : GP1M009A020HG

fabrikatzailea : Global Power Technologies Group

deskribapena : MOSFET N-CH 200V 9A TO220

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 9A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 400 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 8.6nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 414pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 52W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : GP1M , GP1M00

Dokumentuak GP1M009A020HG

Fitxak : GP1M009A020HG.pdf

produktu erlazionatutako GP1M009A020HG Global Power Technologies Group

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