UGB12JT-E3/81 - DIODE GEN PURP 600V 12A TO263AB

Fabrikatzailea Taldea zenbakia

UGB12JT-E3/81

Barne Taldea zenbakia

ABC-UGB12JT-E3/81

fabrikatzailea

Vishay Semiconductor Diodes Division

Azalpen laburra

DIODE GEN PURP 600V 12A TO263AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

65439 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute UGB12JT-E3/81 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak UGB12JT-E3/81

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : UGB12JT-E3/81

fabrikatzailea : Vishay Semiconductor Diodes Division

deskribapena : DIODE GEN PURP 600V 12A TO263AB

Series : -

Taldearen egoera : Obsolete

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 600V

Oraingoa - Batez besteko laukizatua (Io) : 12A

Tentsioa - Aurrera (Vf) (Max) @ If : 1.75V @ 12A

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 50ns

Oraingoa - alderantzizko ihesa @ Vr : 30µA @ 600V

Edukiera @ Vr, F : -

Muntatzeko mota : Surface Mount

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Hornitzaileentzako gailu paketea : TO-263AB

Eragiketa tenperatura - Junction : -55°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : UGB1 , UGB12J

Dokumentuak UGB12JT-E3/81

Fitxak : UGB12JT-E3/81.pdf

produktu erlazionatutako UGB12JT-E3/81 Vishay Semiconductor Diodes Division

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