SISH625DN-T1-GE3 - MOSFET P-CHAN 30 V POWERPAK 1212

Fabrikatzailea Taldea zenbakia

SISH625DN-T1-GE3

Barne Taldea zenbakia

ABC-SISH625DN-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET P-CHAN 30 V POWERPAK 1212

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2413894 Pieces

Erreferentzia Prezioa

~~USD 0.1356~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SISH625DN-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SISH625DN-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SISH625DN-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET P-CHAN 30 V POWERPAK 1212

Series : TrenchFET®

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 17.3A (Ta), 35A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 126nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4427pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.7W (Ta), 52W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8SH

Paketea / Kaxa : PowerPAK® 1212-8SH

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SISH6 , SISH625D

Dokumentuak SISH625DN-T1-GE3

Fitxak : SISH625DN-T1-GE3.pdf

produktu erlazionatutako SISH625DN-T1-GE3 Vishay Siliconix

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