RN1966FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Fabrikatzailea Taldea zenbakia

RN1966FE(TE85L,F)

Barne Taldea zenbakia

ABC-RN1966FE(TE85L,F)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

TRANS 2NPN PREBIAS 0.1W ES6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

9346799 Pieces

Erreferentzia Prezioa

~~USD 0.03502~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RN1966FE(TE85L,F) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RN1966FE(TE85L,F)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RN1966FE(TE85L,F)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : TRANS 2NPN PREBIAS 0.1W ES6

Series : -

Taldearen egoera : Obsolete

Transistore mota : 2 NPN - Pre-Biased (Dual)

Unean - Bildumagilea (Ik) (Max) : 100mA

Tentsioa - Kolektorearen emisorearen matxura (Max) : 50V

Erresistorea - Oinarria (R1) : 4.7 kOhms

Erresistorea - Emisidearen oinarria (R2) : 47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V

Vce saturazioa (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Unean - Bildumaren ebakia (Max) : 100nA (ICBO)

Maiztasuna - Trantsizioa : 250MHz

Potentzia - Max : 100mW

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SOT-563, SOT-666

Hornitzaileentzako gailu paketea : ES6

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RN196 , RN1966FE

Dokumentuak RN1966FE(TE85L,F)

Fitxak : RN1966FE(TE85L,F).pdf

produktu erlazionatutako RN1966FE(TE85L,F) Toshiba Semiconductor and Storage

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