RUC002N05HZGT116 - 1.2V DRIVE NCH MOSFET

Fabrikatzailea Taldea zenbakia

RUC002N05HZGT116

Barne Taldea zenbakia

ABC-RUC002N05HZGT116

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

1.2V DRIVE NCH MOSFET

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

18975355 Pieces

Erreferentzia Prezioa

~~USD 0.01725~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RUC002N05HZGT116 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RUC002N05HZGT116

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RUC002N05HZGT116

fabrikatzailea : Rohm Semiconductor

deskribapena : 1.2V DRIVE NCH MOSFET

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 50V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 200mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.2V, 4.5V

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 25pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 350mW (Ta)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SST3

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RUC00 , RUC002N0

Dokumentuak RUC002N05HZGT116

Fitxak : RUC002N05HZGT116.pdf

produktu erlazionatutako RUC002N05HZGT116 Rohm Semiconductor

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